document number: 86029 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast avalanche sinterglass diode BYT52A, byt52b, byt52d, byt 52g, byt52j, byt52k, byt52m vishay semiconductors mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? low reverse current ? soft recovery characteristics ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? fast rectification and switching diode 949539 parts table part type differe ntiation package BYT52A v r = 50 v; i fav = 1.4 a sod-57 byt52b v r = 100 v; i fav = 1.4 a sod-57 byt52d v r = 200 v; i fav = 1.4 a sod-57 byt52g v r = 400 v; i fav = 1.4 a sod-57 byt52j v r = 600 v; i fav = 1.4 a sod-57 byt52k v r = 800 v; i fav = 1.4 a sod-57 byt52m v r = 1000 v; i fav = 1.4 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics BYT52A v r = v rrm 50 v byt52b v r = v rrm 100 v byt52d v r = v rrm 200 v byt52g v r = v rrm 400 v byt52j v r = v rrm 600 v byt52k v r = v rrm 800 v byt52m v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a average forward current on pc board i fav 0.85 a l = 10mm i fav 1.4 a non repetitive reverse avalanche energy i (br)r = 0.4 a byt52j e r 10 mj byt52k e r 10 mj byt52m e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86029 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 30-jul-10 BYT52A, byt52b, byt52d, byt 52g, byt52j, byt52k, byt52m vishay semiconductors fast avalanche sinterglass diode typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - max. forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a v f --1.3v reverse current v r = v rrm i r --5a v r = v rrm , t j = 150 c i r - - 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 200 ns 0 20 40 80 60 100 120 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949552 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 2.5 v f - forward voltage (v) 16328 t j = 25 c t j = 175 c 16329 i fav - average forward current (a) 0 20406080100120140160180 t amb - ambient temperature (c) 1.6 1.2 1.4 1.0 0.8 0.6 0.4 0.2 0 v r = v rrm half s inewave r thja = 100 k/w pcb: d = 25 mm r thja = 45 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16330 i r - rever s e current (a) v r = v rrm
BYT52A, byt52b, byt52d, byt 52g, byt52j, byt52k, byt52m fast avalanche sinterglass diode vishay semiconductors document number: 86029 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 5 - max. reverse power dissipat ion vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 50 250 100 300 150 350 200 450 400 500 25 50 75 100 125 150 175 t j - junction temperature (c) 16331 p r - rever s e power di ss ipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r v r = v rrm 0 5 10 15 25 35 20 30 40 0.1 1 10 100 v r - rever s e voltage (v) 16332 c d - diode capacitance (pf) f = 1 mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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